Design of CMOS power amplifier class 1 for bluetooth applications

Authors

DOI:

https://doi.org/10.31381/perfiles_ingenieria.v12i12.812

Keywords:

Amplificador de potencia de clase AB, Aplicaciones Bluetooth de Clase-1

Abstract

Un amplificador de potencia de dos etapas de clase AB en cascada operando a 2.4Ghz fue diseñado para un proceso de CMOS de 130nm para aplicaciones Bluetooth de Clase-1. El amplificador de poder fue polarizado en una clase AB para un mejor punto medio entre linealidad y eficiencia. El amplificador de potencia propuesto tiene una eficiencia total de 39.6%, una ganancia de potencia de 25dB y una salida de poder de 20dBm.

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Author Biography

Sergio Ochoa Castillo, Centro de Tecnologia da Informação Renato Archer, Brasil.

Engineer graduate with experience in RF Broadcasting and microelectronics.

References

Mohammed Fakhruddin, Mao Chyuan Tang, Jeff Kuo, James Karp, David Chen, C S Yeh, and S C Chien, “Hot Carrier Degradation and Performance of 65nm RF n- MOSFET” Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE.

E. Cijvat; H. Sjoland ”A fully integrated 2.45 GHz 0.25µm CMOS power amplifier”. Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on.

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Published

2017-08-29

How to Cite

Ochoa Castillo, S., Ponchet, A. F., & Panepucci, R. (2017). Design of CMOS power amplifier class 1 for bluetooth applications. Engineering Profiles, 12(12), 69–71. https://doi.org/10.31381/perfiles_ingenieria.v12i12.812

Issue

Vol. 12 No. 12 (2016): Perfiles de Ingeniería

Section

Ingeniería Electrónica

License

Copyright (c) 2017 Sergio Ochoa Castillo, André F. Ponchet, Roberto Panepucci

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